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              1. "
                4AK19
                Silicon N Channel MOS FET
                High Speed Power Switching
                ADE-208-727 (Z)
                1st. Edition
                February 1999
                Features
                .
                Low on-resistance
                N Channel:R
                DS(on)
                0.5
                .,
                V
                GS
                = 10 V, I
                D
                = 2.5 A
                R
                DS(on)
                0.6
                .,
                V
                GS
                = 4 V, I
                D
                = 2.5 A
                .
                4 V gate drive devices.
                .
                High density mounting
                Outline
                SP-10
                1, 10. Source
                2, 4, 6, 8. Gate
                3, 5, 7, 9. Drain
                12345678910
                G
                3
                S
                G
                5
                G
                7
                G
                9
                S
                2
                1
                DDDD
                468
                10
                9uu