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              1. "
                .
                DATA SHEET
                1994
                Printed in Japan
                SILICON TRANSISTOR ARRAY
                DESCRIPTION
                The
                μ
                PA1428A is NPN silicon epitaxial Darlington Power
                Transistor Array that built in Surge Absorber 4 circuits
                designed for driving solenoid, relay, lamp and so on.
                FEATURES
                .
                Surge Absorber built in.
                .
                Easy mount by 0.1 inch of terminal interval.
                .
                High h
                FE
                for Darlington Transistor.
                ORDERING INFORMATION
                Part Number
                Package
                Quality Grade
                μ
                PA1428AH10 Pin SIPStandard
                Please refer to 襋uality grade on NEC Semiconductor
                Device” (Document number IEI-1209) published by NEC
                Corporation to know the specification of quality grade on
                the devices and its recommended applications.
                ABSOLUTE MAXIMUM RATINGS (T
                a
                = 25 鸆)
                Collector to Base VoltageV
                CBO
                60
                ±
                10V
                Collector to Emitter VoltageV
                CEO
                60
                ±
                10V
                Emitter to Base VoltageV
                EBO
                8V
                Surge Sustaining EnergyE
                CEO(sus)
                30mJ/unit
                Collector Current (DC)I
                C(DC)
                ±
                2A/unit
                Collector Current (pulse)I
                C(pulse)
                *
                ±
                3A/unit
                Base Current (DC)I
                B(DC)
                0.2A/unit
                Total Power DissipationP
                T1
                **3.5W
                Total Power DissipationP
                T2
                ***28W
                Junction TemperatureT
                j
                150鸆
                Storage TemperatureT
                stg
                –55 to +150鸆
                * PW
                350
                μ
                s, Duty Cycle
                2 %
                ** 4 Circuits, T
                a
                = 25 鸆
                *** 4 Cuircuits, T
                c
                = 25 鸆
                Document No. IC-3479
                (O.D. No. IC-8359)
                Date Published September 1994 P
                μ
                PA1428A
                NPN SILICON POWER TRANSISTOR ARRAY
                HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
                INDUSTRIAL USE
                PACKAGE DIMENSION
                (in millimeters)
                26.8 MAX.
                1.4
                1
                0.6 ±0.2
                2.540.5 ±0.2
                1.4
                4.0
                2
                3
                4
                5
                6
                7
                8
                9
                10
                CONNECTION DIAGRAM
                3
                2
                1
                5
                4
                7
                6
                10
                9
                8
                (B)
                R
                1
                (E)
                (C)
                R
                2
                PIN NO.
                2, 4, 6, 8: Base (B)
                3, 5, 7, 9: Collector (C)
                1, 10: Emitter (E)
                R
                1
                = 10 k
                .
                R
                2
                = 900
                .
                .
                .
                .
                .
                The information in this document is subject to change without notice.
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