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        1. "

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              1. "
                SILICON TRANSISTOR ARRAY
                DESCRIPTION
                The
                μ
                PA1456 is NPN silicon epitaxial Darlington
                Power Transistor Array that built in 4 circuits designed
                for driving solenoid, relay, lamp and so on.
                FEATURES
                .
                Easy mount by 0.1 inch of terminal interval.
                .
                High h
                FE
                for Darlington Transistor.
                ORDERING INFORMATION
                Part Number
                Package
                Quality Grade
                μ
                PA1456H10 Pin SIPStandard
                Please refer to "Quality grade on NEC Semiconductor Devices"
                (Document number IEI-1209) published by NEC Corporation to
                know the specification of quality grade on the devices and its
                recommended applications.
                ABSOLUTE MAXIMUM RATINGS (T
                a
                = 25 鸆)
                Collector to Base VoltageV
                CBO
                150V
                Collector to Emitter VoltageV
                CEO
                100V
                Emitter to Base VoltageV
                EBO
                7V
                Collector Current (DC)I
                C(DC)
                ±
                5A/unit
                Collector Current (pulse)I
                C(pulse)
                *
                ±
                10A/unit
                Base Current (DC)I
                B(DC)
                0.5A/unit
                Total Power DissipationP
                T1
                **3.5W
                Total Power DissipationP
                T2
                ***28W
                Junction TemperatureT
                j
                150鸆
                Storage TemperatureT
                stg
                –55 to +150鸆
                * PW
                300
                μ
                s, Duty Cycle
                10 %
                ** 4 Circuits, T
                a
                = 25 鸆
                *** 4 Circuits, T
                c
                = 25 鸆
                Document No. IC-3521
                (O. D. No. IC-6340)
                Date Published September 1994 P
                Printed in Japan
                μ
                PA1456
                NPN SILICON POWER TRANSISTOR ARRAY
                LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
                INDUSTRIAL USE
                PACKAGE DIMENSION
                (in millimeters)
                1
                2
                3
                4
                5
                6
                7
                8
                9
                10
                26.8 MAX.
                1.40.6 ±0.12.54
                4.0
                1.4
                0.5 ±0.1
                CONNECTION DIAGRAM
                2
                3
                1
                468
                579
                10
                (C)
                (
                E
                )
                (B)
                R
                1
                R
                2
                PIN No.
                2, 4, 6, 8
                3, 5, 7, 9
                1, 10
                : Base (B)
                : Collector (C)
                : Emitter (E)
                R
                1
                = 3.0 k
                .
                R
                2
                = 300
                .
                .
                .
                .
                .
                The information in this document is subject to change without notice.
                .
                1994
                DATA SHEET
                9uu