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              1. "
                .
                1995
                DATA SHEET
                COMPOUND FIELD EFFECT POWER TRANSISTOR
                μ
                PA1552B
                N-CHANNEL POWER MOS FET ARRAY
                SWITCHING USE
                DESCRIPTION
                The
                μ
                PA1552B is N-channel Power MOS FET Array
                that built in 4 circuits designed, for solenoid, motor and
                lamp driver.
                FEATURES
                .4 V driving is possible
                .Large Current and Low On-state Resistance
                I
                D(DC)
                =
                ±
                5.0 A
                R
                DS(on)1
                0.18
                .
                MAX. (V
                GS
                = 10 V, I
                D
                = 3 A)
                R
                DS(on)2
                0.24
                .
                MAX. (V
                GS
                = 4 V, I
                D
                = 3 A)
                .Low Input Capacitance Ciss = 200 pF TYP.
                ORDERING INFORMATION
                Type NumberPackage
                μ
                PA1552BH10 Pin SIP
                ABSOLUTE MAXIMUM RATINGS (T
                A
                = 25 .C)
                Drain to Source VoltageV
                DSS
                Note 1
                60V
                Gate to Source VoltageV
                GSS
                Note 2
                ±
                20V
                Drain Current (DC)I
                D(DC)
                ±
                5.0A/unit
                Drain Current (pulse)I
                D(pulse)
                Note 3
                ±
                20A/unit
                Total Power DissipationP
                T1
                Note 4
                28W
                Total Power DissipationP
                T2
                Note 5
                3.5W
                Channel TemperatureT
                CH
                150.C
                Storage TemperatureT
                stg
                –55 to +150.C
                Single Avalanche CurrentI
                AS
                Note 6
                5.0A
                Single Avalanche EnergyE
                AS
                Note 6
                2.5mJ
                Notes1.V
                GS
                = 02.V
                DS
                = 0
                3.PW
                10
                μ
                s, Duty Cycle
                1 %4.4 Circuits, T
                C
                = 25 .C
                5.4 Circuits, T
                A
                = 25 .C6.Starting T
                CH
                = 25 .C, V
                DD
                = 30 V, V
                GS
                = 20 V
                0,
                R
                G
                = 25
                .
                , L = 100
                μ
                H
                The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
                device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
                may be applied to this device.
                Document No. G10599EJ2V0DS00 (2nd edition)
                Date Published December 1995 P
                Printed in Japan
                PACKAGE DIMENSIONS
                in millimeters
                CONNECTION DIAGRAM
                26.8 MAX.
                1.40.6±0.1
                2.54
                4.0
                1.4
                0.5±0.1
                1
                10
                23456789
                3
                2
                1
                4
                5
                6
                7
                8
                9
                10
                2, 4, 6, 8
                3, 5, 7, 9
                1, 10
                : Gate
                : Drain
                : Source
                ELECTRODE CONNECTION
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