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              1. "
                .
                1999
                COMPOUND FIELD EFFECT POWER TRANSISTOR
                μ
                μ
                μ
                μ
                PA1560
                N-CHANNEL POWER MOS FET ARRAY
                SWITCHING
                INDUSTRIAL USE
                DATA SHEET
                Document No.G14283EJ2V0DS00 (2nd edition)
                Date PublishedApril 2001 NS CP(K)
                Printed in Japan
                The mark 5 shows major revised points.
                The information in this document is subject to change without notice. Before using this document, please
                confirm that this is the latest version.
                Not all devices/types available in every country. Please check with local NEC representative for
                availability and additional information.
                DESCRIPTION
                The
                μ
                PA1560 is N-Channel Power MOS FET Array
                that built in 4 circuits designed for solenoid, motor and
                lamp driver.
                FEATURES
                .
                Full mold package with 4 circuits
                .
                4 V driving is possible
                .
                Low on-state resistance
                R
                DS(on)1
                = 165 m
                .
                MAX. (V
                GS
                = 10 V, I
                D
                = 1.5 A)
                R
                DS(on)2
                = 200 m
                .
                MAX. (V
                GS
                = 4 V, I
                D
                = 1.5 A)
                .
                Low input capacitance
                C
                iss
                = 600 pF TYP.
                ORDERING INFORMATION
                PART NUMBERPACKAGE
                μ
                PA1560H10-pin SIP
                ABSOLUTE MAXIMUM RATINGS (T
                A
                = 25°C)
                Drain to Source Voltage (V
                GS
                = 0 V)V
                DSS
                120V
                Gate to Source Voltage (V
                DS
                = 0 V)V
                GSS(AC)
                ±20V
                Gate to Source Voltage (V
                DS
                = 0 V)V
                GSS(DC)
                + 20, –10V
                Drain Current (DC) (T
                C
                = 25°C)I
                D(DC)
                ±3.0A
                Drain Current (pulse)
                Note1
                I
                D(pulse)
                ±12A
                Total Power Dissipation (T
                C
                = 25°C)P
                T1
                28W
                Total Power Dissipation (T
                A
                = 25°C)P
                T2
                3.7W
                Channel TemperatureT
                ch
                150°C
                Storage TemperatureT
                stg
                –55 to + 150°C
                Single Avalanche Current
                Note2
                I
                AS
                3.0A
                Single Avalanche Energy
                Note2
                E
                AS
                0.9mJ
                Notes1.PW
                10
                μ
                s, Duty Cycle
                1 %
                2.Starting T
                ch
                = 25
                °C, V
                DD
                = 60
                V, R
                G
                = 25
                .
                , V
                GS
                = 20
                V
                .
                0
                V
                Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
                this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
                voltage may be applied to this device.
                PACKAGE DRAWING (Unit : mm)
                26.8 MAX.
                1.40.6±0.1
                2.54
                4.0
                1.4
                0.5±0.1
                1
                10
                23456789
                EQUIVALENT CIRCUIT
                3
                2468
                110
                579
                ELECTRODE CONNECTION
                2, 4, 6, 8
                3, 5, 7, 9
                1, 10
                : Gate
                : Drain
                : Source
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